Siliup SP20N28T2

Siliup · FETs & Power MOSFETs · MPN SP20N28T2

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4nC@4.5V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation350mW
RDS(on)28mΩ@4.5V;32mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)300pF

Technical details

N-Channel 20V 4.2A 350mW Surface Mount SOT-23

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