Siliup SP20N22T2

Siliup · FETs & Power MOSFETs · MPN SP20N22T2

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)11nC@4.5V
Output Capacitance(Coss)155pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)22mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

N-Channel 20V 5.8A 1W Surface Mount SOT-23

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