Siliup SP20N11NQ

Siliup · FETs & Power MOSFETs · MPN SP20N11NQ

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7nC@4.5V
Output Capacitance(Coss)158pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2.8W
RDS(on)19mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)98pF
Number1 N-channel
Input Capacitance(Ciss)782pF

Technical details

N-Channel 20V 8A 2.8W Surface Mount PDFN-6L(2x2)

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