Siliup SP20N11KNQ

Siliup · FETs & Power MOSFETs · MPN SP20N11KNQ

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)8.7nC@4.5V
Output Capacitance(Coss)228pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)129pF
RDS(on)11mΩ@4.5V;20mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)982pF

Technical details

N-Channel 20V 9A 2.1W Surface Mount PDFN-6L(2x2)

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