Siliup SP20N10TH

Siliup · FETs & Power MOSFETs · MPN SP20N10TH

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)10.5mΩ@4.5V;14.5mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)865pF

Technical details

20V 27A 26W Surface Mount TO-252

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