Siliup SP20N09T1

Siliup · FETs & Power MOSFETs · MPN SP20N09T1

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)162pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)10mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

20V 7A 1.25W Surface Mount SOT-23-3L

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