Siliup SP20M65TF

Siliup · FETs & Power MOSFETs · MPN SP20M65TF

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)45.5nC@10V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)175mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.745nF
TypeN-Channel

Technical details

N-Channel 650V 20A 34W Through Hole TO-247

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