Siliup SP2013TS

Siliup · FETs & Power MOSFETs · MPN SP2013TS

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)16nC@4.5V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)176pF
RDS(on)13.5mΩ@4.5V;16mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.8nF

Technical details

20V 11A 1.3W Surface Mount SOT-23-6L

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