Siliup · FETs & Power MOSFETs · MPN SP2013T1
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 16nC@4.5V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.3W |
| RDS(on) | 13.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.8nF |
20V 11A 1.3W Surface Mount SOT-23-3L