Siliup SP2013NQ

Siliup · FETs & Power MOSFETs · MPN SP2013NQ

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)14nC@4.5V
Output Capacitance(Coss)204pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)174pF
RDS(on)13mΩ@4.5V;16mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.515nF

Technical details

20V 13A 3.1W Surface Mount PDFN-6L(2x2)

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