Siliup SP2012CNJ

Siliup · FETs & Power MOSFETs · MPN SP2012CNJ

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)40.1nC@4.5V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation14W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)31mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 20A 14W Surface Mount PDFN3X3-8L

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