Siliup SP2011ACTM

Siliup · FETs & Power MOSFETs · MPN SP2011ACTM

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)13.4nC@4.5V;72.8nC@4.5V
Output Capacitance(Coss)178pF;332pF
Current - Continuous Drain(Id)35A;38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation32.8W
RDS(on)8mΩ@4.5V;9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)146pF;274pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.196nF;2.872nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 38A 32.8W Surface Mount TO-252-4L

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