Siliup SP2011ACNK

Siliup · FETs & Power MOSFETs · MPN SP2011ACNK

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)72.8nC@4.5V
Output Capacitance(Coss)332pF
Current - Continuous Drain(Id)38A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation32.8W
Reverse Transfer Capacitance (Crss@Vds)274pF
RDS(on)11.5mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)2.872nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 38A 32.8W Surface Mount PDFN5x6-8L

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