Siliup SP2006KDTW

Siliup · FETs & Power MOSFETs · MPN SP2006KDTW

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Specifications

Drain to Source Voltage20V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)660mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)1Ω@2.5V
Number2 P-Channel
Input Capacitance(Ciss)113pF
TypeP-Channel

Technical details

P-Channel 20V 0.66A 0.15W Surface Mount SOT-363

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