Siliup SP2006KDTL

Siliup · FETs & Power MOSFETs · MPN SP2006KDTL

No reviews yet — be the first to review Siliup SP2006KDTL.

Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)1.25nC@4.5V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)660mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)650mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)75pF

Technical details

P-Channel 20V 660mA 150mW Surface Mount SOT-563

Related FETs & Power MOSFETs