Siliup SP2004KT2

Siliup · FETs & Power MOSFETs · MPN SP2004KT2

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Specifications

Gate Charge(Qg)1.9nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation350mW
RDS(on)400mΩ@4.5V;400mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 P-Channel
Input Capacitance(Ciss)113pF
TypeP-Channel

Technical details

P-Channel 20V 700mA 350mW Surface Mount SOT-23

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