Siliup SP2004KND

Siliup · FETs & Power MOSFETs · MPN SP2004KND

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Specifications

Output Capacitance(Coss)15pF
Pd - Power Dissipation420mW
Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)1.9nC@4.5V
Current - Continuous Drain(Id)750mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)400mΩ@4.5V;550mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)113pF

Technical details

P-Channel 20V 750mA 420mW Surface Mount PDFN1212-3L

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