Siliup SP2002KT7

Siliup · FETs & Power MOSFETs · MPN SP2002KT7

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)800pC@4.5V
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)750mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation150mW
RDS(on)250mΩ@4.5V;350mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)35pF
TypeN-Channel

Technical details

N-Channel 20V 750mA 150mW Surface Mount SOT-723

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