Siliup SP18N20TH

Siliup · FETs & Power MOSFETs · MPN SP18N20TH

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Specifications

Configuration-
Gate Charge(Qg)64nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)183pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation130W
RDS(on)160mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)1.133nF

Technical details

N-Channel 200V 18A 130W Surface Mount TO-252-2L

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