Siliup SP16P50T2

Siliup · FETs & Power MOSFETs · MPN SP16P50T2

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Specifications

Gate Charge(Qg)4.5nC@2.5V
Drain to Source Voltage16V
Output Capacitance(Coss)293pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation350mW
RDS(on)50mΩ@4.5V;60mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)187pF
Number1 P-Channel
Input Capacitance(Ciss)475pF

Technical details

16V 3A 350mW Surface Mount SOT-23

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