Siliup SP1618T1

Siliup · FETs & Power MOSFETs · MPN SP1618T1

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Specifications

Drain to Source Voltage16V
Configuration-
Gate Charge(Qg)20nC@4.5V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)168pF
RDS(on)18mΩ@4.5V;26mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.821nF

Technical details

P-Channel 16V 7A 1.8W Surface Mount SOT-23-3L

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