Siliup SP1613T1

Siliup · FETs & Power MOSFETs · MPN SP1613T1

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Specifications

Drain to Source Voltage16V
Configuration-
Gate Charge(Qg)30nC@10V
Output Capacitance(Coss)411pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)362pF
RDS(on)16mΩ@4.5V;21mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)2.05nF

Technical details

P-Channel 16V 8A 2W Surface Mount SOT-23-3L

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