Siliup SP120N65CTO

Siliup · FETs & Power MOSFETs · MPN SP120N65CTO

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Specifications

Configuration-
Gate Charge(Qg)236nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)172A
Output Capacitance(Coss)355pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation428W
RDS(on)15mΩ
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)6.35nF

Technical details

650V 172A 4V 428W 15mΩ 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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