Siliup · FETs & Power MOSFETs · MPN SP10N65TQ
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| Drain to Source Voltage | 650V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 32nC@10V |
| Output Capacitance(Coss) | 136pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 670mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.645nF |
N-Channel 650V 10A 130W Through Hole TO-220-3L-C