Siliup SP1049CP8

Siliup · FETs & Power MOSFETs · MPN SP1049CP8

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Specifications

Gate Charge(Qg)17nC@10V;21nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)109pF;81pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.8V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)67pF;68pF
RDS(on)40mΩ@10V;90mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)2.605nF;2.41nF
Vgs±20V

Technical details

N-Channel+P-Channel Array 100V 6A 1.8W Surface Mount SOP-8

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