Siliup SP1022CP8

Siliup · FETs & Power MOSFETs · MPN SP1022CP8

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Specifications

Gate Charge(Qg)13.6nC@10V;16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)19pF;18pF
RDS(on)160mΩ;230mΩ
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)498pF;721pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 2.5A 2W Surface Mount SOP-8

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