Siliup SP1012CNK

Siliup · FETs & Power MOSFETs · MPN SP1012CNK

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Specifications

Gate Charge(Qg)13.6nC@10V;16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)25pF;30pF
Current - Continuous Drain(Id)8A;7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)17pF;18pF
RDS(on)90mΩ@10V;100mΩ@4.5V;230mΩ@10V;240mΩ@4.5V
Number-
Input Capacitance(Ciss)695pF;721pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 100V 8A 20W Surface Mount PDFN-8L(5x6)

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