Siliup SP1012ACP8

Siliup · FETs & Power MOSFETs · MPN SP1012ACP8

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Specifications

Gate Charge(Qg)13.6nC@10V;16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)23pF;30pF
Current - Continuous Drain(Id)3.5A;2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)19pF;18pF
RDS(on)90mΩ@10V;230mΩ@10V
Number-
Input Capacitance(Ciss)792pF;721pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 100V 3.5A 2W Surface Mount SOP-8L

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