Siliup SP1011CNK

Siliup · FETs & Power MOSFETs · MPN SP1011CNK

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Specifications

Gate Charge(Qg)20.2nC@10V;72nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)32.3pF;72.3pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.8V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)27.3pF;66.4pF
RDS(on)80mΩ@10V;85mΩ@4.5V;85mΩ@10V;95mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)951pF;3.769nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 100V 15A 45W Surface Mount PDFN-8L(5x6)

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