Siliup SP05N100TC

Siliup · FETs & Power MOSFETs · MPN SP05N100TC

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Specifications

Configuration-
Gate Charge(Qg)7.5nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)43pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)40Ω@10V
Number1 N-channel
Input Capacitance(Ciss)472pF

Technical details

N-Channel 1kV 500mA 3.6W Surface Mount SOT-223

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