Siliup · FETs & Power MOSFETs · MPN SP02N11TS
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| Output Capacitance(Coss) | 19pF |
|---|---|
| Pd - Power Dissipation | 1.1W |
| Drain to Source Voltage | 110V |
| Configuration | - |
| Gate Charge(Qg) | 11nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 220mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 286pF |
1.1W 110V 1.6V 220mΩ@10V 1 N-channel N-Channel SOT-23-6L Single FETs, MOSFETs RoHS