Siliup SP025N18GHTQ

Siliup · FETs & Power MOSFETs · MPN SP025N18GHTQ

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation280W
RDS(on)18mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)18pF
Number1 N-channel
Input Capacitance(Ciss)9.824nF
TypeN-Channel

Technical details

N-Channel 250V 60A 280W Through Hole TO-220-3L

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