Siliup SP025N16GHTD

Siliup · FETs & Power MOSFETs · MPN SP025N16GHTD

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)362pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation315W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10.9pF
Number1 N-channel
Input Capacitance(Ciss)5.654nF

Technical details

250V 70A 3V 315W 16mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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