Siliup SP025N08GHTF

Siliup · FETs & Power MOSFETs · MPN SP025N08GHTF

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Specifications

Output Capacitance(Coss)600pF
Pd - Power Dissipation540W
Configuration-
Gate Charge(Qg)120nC
Drain to Source Voltage250V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.56nF

Technical details

540W 250V 3V 8mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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