Siliup · FETs & Power MOSFETs · MPN SP020N09GHTQ
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 270W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 9.5mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 5.318nF |
| Type | N-Channel |
N-Channel 200V 110A 270W Through Hole TO-220-3L