Siliup SP020N09GHTO

Siliup · FETs & Power MOSFETs · MPN SP020N09GHTO

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Specifications

Configuration-
Drain to Source Voltage200V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)342pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.94nF

Technical details

N-Channel 200V 140A 320W Surface Mount TOLL

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