Siliup SP020N09GHTF

Siliup · FETs & Power MOSFETs · MPN SP020N09GHTF

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)437pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.183nF
TypeN-Channel

Technical details

N-Channel 200V 130A 300W Through Hole TO-247

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