Siliup · FETs & Power MOSFETs · MPN SP020N09GHTD
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Output Capacitance(Coss) | 437pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 270W |
| RDS(on) | 9.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.183nF |
200V 110A 270W Surface Mount TO-263-3L