Siliup SP020N08GHTQ

Siliup · FETs & Power MOSFETs · MPN SP020N08GHTQ

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Specifications

Gate Charge(Qg)78nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation280W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF

Technical details

200V 120A 280W Through Hole TO-220-3L

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