Siliup SP020N08GHTD

Siliup · FETs & Power MOSFETs · MPN SP020N08GHTD

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Specifications

Drain to Source Voltage200V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation280W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
TypeN-Channel

Technical details

N-Channel 200V 120A 280W Surface Mount TO-263

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