Siliup SP01N11TS

Siliup · FETs & Power MOSFETs · MPN SP01N11TS

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Specifications

Output Capacitance(Coss)25pF
Pd - Power Dissipation1.15W
Drain to Source Voltage110V
Configuration-
Gate Charge(Qg)12nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)360pF

Technical details

1.15W 110V 1.5V 180mΩ@10V 1 N-channel N-Channel SOT-23-6L Single FETs, MOSFETs RoHS

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