Siliup SP015N09GHTQ

Siliup · FETs & Power MOSFETs · MPN SP015N09GHTQ

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)268pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation180W
RDS(on)9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)3.31nF
TypeN-Channel

Technical details

N-Channel 150V 90A 180W Through Hole TO-220-3L

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