Siliup · FETs & Power MOSFETs · MPN SP015N08GHTQ
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| Output Capacitance(Coss) | 290pF |
|---|---|
| Pd - Power Dissipation | 190W |
| Gate Charge(Qg) | 42nC |
| Configuration | - |
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 8.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
190W 150V 3V 8.2mΩ@10V 1 N-channel N-Channel TO-220-3L Single FETs, MOSFETs RoHS