Siliup · FETs & Power MOSFETs · MPN SP015N08GHTD
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 290pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
150V 110A 3V 190W 8mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS