Siliup SP013N04BGHTO

Siliup · FETs & Power MOSFETs · MPN SP013N04BGHTO

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage135V
Output Capacitance(Coss)536pF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation380W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)5.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.62nF

Technical details

135V 200A 380W Surface Mount TOLL

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