Siliup · FETs & Power MOSFETs · MPN SP012N09GHTH
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| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Configuration | - |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.045nF |
120V 65A 96W Surface Mount TO-252