Siliup · FETs & Power MOSFETs · MPN SP012N06GHTQ
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Configuration | - |
| Output Capacitance(Coss) | 894pF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 6.5mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 4.618nF |
120V 130A 160W Through Hole TO-220