Siliup · FETs & Power MOSFETs · MPN SP012N03BGHTQ
No reviews yet — be the first to review Siliup SP012N03BGHTQ.
| Gate Charge(Qg) | 152nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 835pF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 230W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.64nF |
| Type | N-Channel |
N-Channel 120V 180A 230W Through Hole TO-220-3L