Siliup SP012N03BGHTD

Siliup · FETs & Power MOSFETs · MPN SP012N03BGHTD

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Specifications

Gate Charge(Qg)152nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)835pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.64nF
TypeN-Channel

Technical details

N-Channel 120V 180A 230W Surface Mount TO-263

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