Siliup SP012N03AGHTO

Siliup · FETs & Power MOSFETs · MPN SP012N03AGHTO

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Specifications

Gate Charge(Qg)198nC@10V
Drain to Source Voltage120V
Configuration-
Output Capacitance(Coss)1.6nF
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation320W
RDS(on)2.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)44pF
Number1 N-channel
Input Capacitance(Ciss)11.5nF

Technical details

120V 230A 320W Surface Mount TOLL-8

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